JPS6323362A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS6323362A
JPS6323362A JP11463687A JP11463687A JPS6323362A JP S6323362 A JPS6323362 A JP S6323362A JP 11463687 A JP11463687 A JP 11463687A JP 11463687 A JP11463687 A JP 11463687A JP S6323362 A JPS6323362 A JP S6323362A
Authority
JP
Japan
Prior art keywords
region
gate electrode
impurity
concentration region
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11463687A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0461497B2 (en]
Inventor
Yoshiaki Kamigaki
良昭 神垣
Kiyoo Ito
清男 伊藤
Hiroo Masuda
弘生 増田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11463687A priority Critical patent/JPS6323362A/ja
Publication of JPS6323362A publication Critical patent/JPS6323362A/ja
Publication of JPH0461497B2 publication Critical patent/JPH0461497B2/ja
Granted legal-status Critical Current

Links

JP11463687A 1987-05-13 1987-05-13 半導体装置の製造方法 Granted JPS6323362A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11463687A JPS6323362A (ja) 1987-05-13 1987-05-13 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11463687A JPS6323362A (ja) 1987-05-13 1987-05-13 半導体装置の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP15337376A Division JPS5378181A (en) 1976-12-22 1976-12-22 Semiconductor device and its manufacture

Publications (2)

Publication Number Publication Date
JPS6323362A true JPS6323362A (ja) 1988-01-30
JPH0461497B2 JPH0461497B2 (en]) 1992-10-01

Family

ID=14642775

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11463687A Granted JPS6323362A (ja) 1987-05-13 1987-05-13 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6323362A (en])

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0555246A (ja) * 1991-08-26 1993-03-05 Semiconductor Energy Lab Co Ltd 絶縁ゲイト型半導体装置の作製方法
JPH0766393A (ja) * 1993-08-23 1995-03-10 Nec Kansai Ltd 半導体装置の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5169985A (en) * 1974-12-16 1976-06-17 Hitachi Ltd Handotaisochino seizohoho
JPS6129554A (ja) * 1984-07-20 1986-02-10 Nec Corp サ−マルプリントヘツド

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5169985A (en) * 1974-12-16 1976-06-17 Hitachi Ltd Handotaisochino seizohoho
JPS6129554A (ja) * 1984-07-20 1986-02-10 Nec Corp サ−マルプリントヘツド

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0555246A (ja) * 1991-08-26 1993-03-05 Semiconductor Energy Lab Co Ltd 絶縁ゲイト型半導体装置の作製方法
JPH0766393A (ja) * 1993-08-23 1995-03-10 Nec Kansai Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0461497B2 (en]) 1992-10-01

Similar Documents

Publication Publication Date Title
US4038107A (en) Method for making transistor structures
JPS61179567A (ja) 自己整合積層ｃｍｏｓ構造の製造方法
KR940008571B1 (ko) 반도체장치의 제조방법
JPH02240930A (ja) 半導体装置およびその製造方法
JPS6323362A (ja) 半導体装置の製造方法
JPS6129554B2 (en])
JPS62160770A (ja) 絶縁ゲート型電界効果トランジスタおよびその製造方法
JP2544806B2 (ja) 半導体装置の製造方法
JPH0346272A (ja) 半導体装置の製造方法
JPS6039868A (ja) 半導体装置の製造方法
JPS6074681A (ja) 半導体装置の製造方法
JPS5826177B2 (ja) 半導体装置の製造方法
JPS60121771A (ja) 半導体装置
JPS60217666A (ja) 半導体装置の製造方法
JPS61139057A (ja) 半導体集積回路装置の製造方法
JPS61154078A (ja) Ｍｏｓｆｅｔの製造方法
JPS63302566A (ja) Ｍｏｓ半導体装置の製造方法
JPH01123474A (ja) 絶縁ゲート型半導体装置
JPH0316140A (ja) Ｍｏｓ型半導体装置の製造方法
JPH0137856B2 (en])
JPH02148851A (ja) 半導体装置の製造方法
JPH04350953A (ja) 半導体集積回路装置の製造方法
JPS61206219A (ja) 半導体装置の製造方法
JPH01117362A (ja) 半導体集積回路装置の製造方法
JPH0346370A (ja) Ｍｏｓ型半導体装置とその製造方法